Wednesday, 28 August 2013

Samsung detailed more about its V-NAND and New SSD



Samsung recently unveiled memory chips NAND Flash V-operator a new architecture supposed to improve reliability and performance. At the same time, the manufacturer the opportunity to present a SSD of 960 GB, which is not unlike what has Crucial M500 series with her. A few days ago, Samsung showed that the mass production of memory chips NAND-Flash V (Vertical NAND), had begun. Unlike the conventional NAND using a 2D structure; the V-NAND is gaining height and it passes relief stacking layers. Up to 24 for the time the Samsung said. As stated in the presentation of the Flash Memory Summit, Samsung believes that the reduction of fine engraving comes to its limits. Besides the possibility to switch to alternatives such as TLC NAND and three bits per cell (rather than two), as explained in that other document, you must solve the problem of interference that are increasingly important as the transistor size is reduced. The structure type Floating Gate MOSFET (FGMOS) is set aside for the passage Charge Trap Flash (CTF) that is more reliable and better density. The whole is then stacked to provide chips that are still operating the same fine engraving, but are also able to hold more data.

Samsung announces and mentioned that it already produce faster SSDs consume less and less equivalent operating chip storage capacity. But the company is also focusing on to a strong impact of the arrival of this technology in the market and listing and expects an explosion of its orders on the business market and the general public in 2020. Unfortunately, the surprise and the announcement effect turn this time a little short, without details. Of course, we know they operate a S-ATA 6Gb / s, but the rates and IOPS are not specified. The manufacturer just announced that "960 GB version has the highest level of performance, with over 20% more sequential reading and writing through the use of 64 die of 3D V-MLC NAND, each with a storage capacity of 128 GB ". Finally, we just know that the SSD NAND-V are given for 35,000 erase cycles, which is particularly high because is generally between 3000 and 5000 cycles with conventional MLC chips. Now we have to wait until the first returns of independent tests to find out what it is exactly V-chip NAND and SSD exploiters. Samsung says that the production of these began at the beginning of the forthcoming year, so we will soon have more information.

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